Samsung eUFS_UFS3.1

Samsung begins mass production of 512GB eUFS 3.1 chips

512GB eUFS 3.1 stores 8K videos and large-size image files without buffering

Samsung has started mass producing 512GB storage chips that are based on the new, eUFS 3.1 standard for use in flagship smartphones. Delivering three times the write speed of the previous 512GB eUFS 3.0 mobile memory, Samsung’s new eUFS 3.1 breaks the 1GB/s performance threshold in smartphone storage.

These 512GB eUFS 3.1 chips are already being used in the Galaxy S20 smartphone lineup, and we can now expect them to show up in high-end smartphones from other brands.

At a sequential write speed of over 1,200MB/s, Samsung 512GB eUFS 3.1 boasts more than twice the speed of a SATA-based PC (540MB/s) and over ten times the speed of a UHS-I microSD card (90MB/s). This means consumers can enjoy the speed of an ultra-slim notebook when storing massive files like 8K videos or several hundred large-size photos in their smartphones, without any buffering.

Transferring contents from an old phone to a new device will also require considerably less time. Phones with the new eUFS 3.1 will only take about 1.5 minutes to move 100GB of data whereas UFS 3.0-based phones require more than four minutes.

In terms of random performance, the 512GB eUFS 3.1 processes up to 60 percent faster than the widely used UFS 3.0 version, offering 100,000 input/output operations per second (IOPS) for reads and 70,000 IOPS for writes.

“With our introduction of the fastest mobile storage, smartphone users will no longer have to worry about the bottleneck they face with conventional storage cards,” said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics.

“The new eUFS 3.1 reflects our continuing commitment to supporting the rapidly increasing demands from global smartphone makers this year.”

Along with the 512GB option, Samsung will also have 256GB and 128GB capacities available for flagship smartphones that will be launched later this year.

Samsung began volume production of fifth-generation V-NAND at its new Xi’an, China, line (X2) this month to fully accommodate storage demand throughout the flagship and high-end smartphone market. The company soon plans to shift V-NAND volume production at its Pyeongtaek line (P1) in Korea from fifth-generation to sixth-generation V-NAND to better address the growing demand.

Samsung Embedded Storage Memory Lineup

ProductSequential ReadSequential WriteRandom ReadRandom Write
512GB eUFS 3.1(March 2020)2100MB/s1200MB/s(3X enhancement)100,000 IOPS(1.6X enhancement)70,000 IOPS(1.03X enhancement)
512GB eUFS 3.0(Feb. 2019)2100MB/s410MB/s63,000 IOPS68,000 IOPS
1TB eUFS 2.1(Jan. 2019)1000MB/s260MB/s58,000 IOPS50,000 IOPS
512GB eUFS 2.1(Nov. 2017)860MB/s255MB/s42,000 IOPS40,000 IOPS
Automotive UFS 2.1(Sept. 2017)850MB/s150MB/s45,000 IOPS32,000 IOPS
256GB UFS Card(July 2016)530MB/s170MB/s40,000 IOPS35,000 IOPS
256GB eUFS 2.0(Feb. 2016)850MB/s260MB/s45,000 IOPS40,000 IOPS
128GB eUFS 2.0(Jan. 2015)350MB/s150MB/s19,000 IOPS14,000 IOPS
eMMC 5.1250MB/s125MB/s11,000 IOPS13,000 IOPS
eMMC 5.0250MB/s 90MB/s 7,000 IOPS13,000 IOPS
eMMC 4.5140MB/s 50MB/s 7,000 IOPS 2,000 IOPS

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